Abstract
A semiconductor structure includes a substrate with an opening in or on the substrate. The semiconductor structure further includes a barrier layer lined in the opening, wherein a dopant is trapped at a grain boundary of the barrier layer. The semiconductor structure further includes a conductive material filled into the opening.
Full Text
What is claimed is:
A semiconductor structure includes a substrate with an opening in or on the substrate. The semiconductor structure further includes a barrier layer lined in the opening, wherein a dopant is trapped at a grain boundary of the barrier layer. The semiconductor structure further includes a conductive material filled into the opening.
Timeline
Filed
04/20/2026Published
08/27/2026Granted
Not AvailableIPC Codes(2)
H10W 20/00:Interconnections in chips, wafers or substrates
H10W 20/41:characterised by their conductive parts