/Temperature Compensated Surface Acoustic Wave Resonator Including A Reflector Having An Increased Dielectric Film Thickness
Abstract

Aspects and embodiments disclosed herein include an acoustic wave device comprising a substrate, a pair of IDT electrodes formed on the substrate, a respective finger of one IDT electrode being separated from an adjacent finger of the other IDT electrode by a first pitch distance, and reflectors formed on the substrate interposing the pair of IDT electrodes therebetween, the reflectors and the pair of IDT electrodes arranged along a propagation direction of a main acoustic wave, each of the reflectors including a plurality of fingers separated from each other by a second pitch distance and extending in a same direction of extension as the plurality of fingers of the pair of IDT electrodes.

Full Text

What is claimed is:

Aspects and embodiments disclosed herein include an acoustic wave device comprising a substrate, a pair of IDT electrodes formed on the substrate, a respective finger of one IDT electrode being separated from an adjacent finger of the other IDT electrode by a first pitch distance, and reflectors formed on the substrate interposing the pair of IDT electrodes therebetween, the reflectors and the pair of IDT electrodes arranged along a propagation direction of a main acoustic wave, each of the reflectors including a plurality of fingers separated from each other by a second pitch distance and extending in a same direction of extension as the plurality of fingers of the pair of IDT electrodes.
Timeline
Filed
04/20/2026
Published
08/27/2026
Granted
Not Available
IPC Codes(4)
H03H 9/25:Constructional features of resonators using surface acoustic waves
H03H 9/02:Details
H03H 9/64:using surface acoustic waves