Abstract
An optoelectronic device includes a first reflector and a second reflector, which define an optical path on a substrate. A gain medium is disposed on the optical path between the first and second reflectors and configured to amplify laser radiation within a given gain band. A comb filter is disposed on the optical path between the first and second reflectors and configured to pass a set of distinct wavelength sub-bands within the gain band, the set of distinct wavelength sub-bands defining a comb. A bandpass filter is disposed on the optical path between the first and second reflectors in series with the comb filter. The bandpass filter has a passband encompassing a subset of the wavelength sub-bands in the comb.
Full Text
What is claimed is:
An optoelectronic device includes a first reflector and a second reflector, which define an optical path on a substrate. A gain medium is disposed on the optical path between the first and second reflectors and configured to amplify laser radiation within a given gain band. A comb filter is disposed on the optical path between the first and second reflectors and configured to pass a set of distinct wavelength sub-bands within the gain band, the set of distinct wavelength sub-bands defining a comb. A bandpass filter is disposed on the optical path between the first and second reflectors in series with the comb filter. The bandpass filter has a passband encompassing a subset of the wavelength sub-bands in the comb.
Timeline
Filed
04/20/2026Published
08/27/2026Granted
Not AvailableIPC Codes(4)
H01S 5/14:External cavity lasers (takes precedence H01S 5/18; mode locking H01S 5/065)
H01S 3/10:Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
H01S 5/50:Amplifier structures not provided for in groups