An image sensor includes, a substrate, a first region formed in the substrate, a first photoelectric conversion element (PD) disposed on the first region, a first microlens covering the first PD, a floating diffusion region (FD) electrically coupled to the first PD, a first transfer transistor electrically coupled between the first PD and the FD, and first to fifth pixel transistors, each electrically coupled to the FD, the first to third pixel transistors each being selected from the group consisting of a reset transistor, a selection transistor, and a driving transistor, and none of the first to fifth pixel transistors being a transfer transistor.