A semiconductor power device having, in a top view thereof, a edge termination region located between an active region and a chip end surrounds the active region. The semiconductor power device includes a semiconductor substrate that has: a drain region of a first conductivity type; a plurality of drift regions of the first conductivity type and a plurality of partition regions of a second conductivity type alternately formed, one in contact with another, over the drain region, thereby forming a plurality of pn junctions, each extending in a depth direction; a connecting region of the second conductivity type formed on two or more of the drift regions in the edge termination region, thereby connecting two or more of the partition regions in the edge termination region; and at least one electrically-floating region of the first conductivity type, formed on the connecting region in the edge termination region.