A method includes providing a device wafer including a semiconductor substrate and a metal layer disposed over the semiconductor substrate; patterning the metal layer to form a plurality of openings extending through the metal layer; forming a first adhesive layer over the metal layer, wherein the first adhesive layer is in direct contact with the semiconductor substrate through the plurality of openings; providing a backside support wafer; bonding the device wafer to the backside support wafer through the first adhesive layer; curing the first adhesive layer to secure the backside support wafer to the device wafer; and forming recessed regions in the semiconductor substrate corresponding to saw dicing lanes of the device wafer.