/Mask Pattern Optimization Method, Electronic Device, And Program Product
Abstract

The present application discloses a mask pattern optimization method, an electronic device, and a program product. The method comprises determining a target optimization model from a plurality of optimization models based on an optimization accuracy requirement, the optimization models being obtained by training a design layout and a ridge point pattern with consistency; inputting a first design layout to the target optimization model to obtain a model prediction result; determining a ridge point pattern based on the model prediction result and the first design layout, the ridge point pattern comprising a plurality of ridge points containing direction information; and generating a first mask pattern based on the first design layout and the ridge points. In the present application, the mask patterns after ILT optimization have data consistency. An appropriate optimization model may be selected based on an optimization accuracy to ensure balance between calculation complexity and model accuracy.

Full Text

What is claimed is:

The present application discloses a mask pattern optimization method, an electronic device, and a program product. The method comprises determining a target optimization model from a plurality of optimization models based on an optimization accuracy requirement, the optimization models being obtained by training a design layout and a ridge point pattern with consistency; inputting a first design layout to the target optimization model to obtain a model prediction result; determining a ridge point pattern based on the model prediction result and the first design layout, the ridge point pattern comprising a plurality of ridge points containing direction information; and generating a first mask pattern based on the first design layout and the ridge points. In the present application, the mask patterns after ILT optimization have data consistency. An appropriate optimization model may be selected based on an optimization accuracy to ensure balance between calculation complexity and model accuracy.
Timeline
Filed
05/11/2026
Published
09/03/2026
Granted
Not Available
IPC Codes(2)
G03F 1/36:Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
G03F 7/00:Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor (using photoresist structures for special production processes, see the relevant places, e.g. B44C, H10P 76/00, H05K)