Abstract
A memory device includes a control signal generation circuit configured to generate a control signal at a voltage level corresponding to a current temperature in each operation period, among a plurality of operation periods, of a program operation, and a bit line control circuit configured to charge a bit line in response to the control signal.
Full Text
What is claimed is:
A memory device includes a control signal generation circuit configured to generate a control signal at a voltage level corresponding to a current temperature in each operation period, among a plurality of operation periods, of a program operation, and a bit line control circuit configured to charge a bit line in response to the control signal.
Timeline
Filed
05/12/2026Published
09/10/2026Granted
Not AvailableIPC Codes(4)
G11C 16/10:Programming or data input circuits
G11C 7/04:with means for avoiding disturbances due to temperature effects
G11C 16/24:Bit-line control circuits