Abstract
A semiconductor device including a first block word line, and a first channel layer located in the first block word line. the semiconductor device including a source pad connected to the first channel layer and located on the first block word line, and a first drain pad connected to the first channel layer and located on the first block word line. The semiconductor device including a global word line connected to the source pad, and a first local word line connected to the first drain pad.
Full Text
What is claimed is:
A semiconductor device including a first block word line, and a first channel layer located in the first block word line. the semiconductor device including a source pad connected to the first channel layer and located on the first block word line, and a first drain pad connected to the first channel layer and located on the first block word line. The semiconductor device including a global word line connected to the source pad, and a first local word line connected to the first drain pad.
Timeline
Filed
05/07/2026Published
09/10/2026Granted
Not AvailableIPC Codes(5)
G11C 5/06:Arrangements for interconnecting storage elements electrically, e.g. by wiring
H10B 43/10:characterised by the top-view layout
H10B 43/27:the channels comprising vertical portions, e.g. U-shaped channels