The present application discloses a three-dimensional integrated sensing-memory-computing chip, a method for manufacturing the same, and a computing method therefor, the chip includes sensing-memory-computing units, each includes a stacked resistive random access-memory device, a sensing device, and a gating device; the stacked resistive random access-memory device group includes at least two resistive random access-memory devices formed in a stack in a thickness direction; the sensing device is configured to receive an external signal and convert the external signal into an input signal, and an output end of the sensing device is coupled to a top electrode of the stacked resistive random access-memory device group; and the gating device is configured to receive a control signal and turned on and turned off based on the control signal, and the gating device is coupled to the top electrode of the stacked resistive random access-memory device group.