Abstract
A buffer layer may be included between a first conductive electrode layer and an insulator layer, and/or between a second conductive electrode layer and the insulator layer of a capacitor structure to reduce lattice mismatching in the capacitor structure. The buffer layer(s) include a combination of materials that promote lattice matching between the insulator layer and one or more of the conductive electrode layers. This reduces the likelihood of formation of structural defects in the capacitor structure relative to another capacitor structure that does not include the buffer layers.
Full Text
What is claimed is:
A buffer layer may be included between a first conductive electrode layer and an insulator layer, and/or between a second conductive electrode layer and the insulator layer of a capacitor structure to reduce lattice mismatching in the capacitor structure. The buffer layer(s) include a combination of materials that promote lattice matching between the insulator layer and one or more of the conductive electrode layers. This reduces the likelihood of formation of structural defects in the capacitor structure relative to another capacitor structure that does not include the buffer layers.
Timeline
Filed
05/12/2026Published
09/10/2026Granted
Not AvailableIPC Codes(2)
H10D 1/68:Capacitors having no potential barriers
H10W 20/40:Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes