A surface acoustic wave resonator device and manufacturing method thereof, the surface acoustic wave resonator device has an interdigital electrode region including a first peripheral region, a first end region, a central region, a second end region and a second peripheral region, and includes: an interdigital transducer, disposed on a piezoelectric substrate and including interdigital electrodes located in the interdigital electrode region; an intermediate layer, disposed on the piezoelectric substrate and covering the interdigital transducer; an acoustic velocity adjusting layer, disposed on a side of at least a portion of the intermediate layer away from the piezoelectric substrate; and a passivation layer, disposed on a side of the intermediate layer away from the piezoelectric substrate, wherein the acoustic velocity adjusting layer is located in the central region, overlaps with portions of the interdigital electrodes located in the central region in a direction perpendicular to the piezoelectric substrate.