Provided is a semiconductor device comprising a semiconductor substrate having an upper surface and a drift region, trench portions provided inwardly from the upper surface of the semiconductor substrate, mesa portions each being a region sandwiched between two of the trench portions; an emitter electrode, and an interlayer dielectric film with a contact hole formed, wherein the mesa portions include a channel mesa portion having a first conductivity type emitter region and a second conductivity type base region on the upper surface and connected to the emitter electrode by the contact hole, and a hole-extraction mesa portion with no channel formed and connected to the emitter electrode by the contact hole, and a first conductivity type first trench bottom region having a higher concentration than the drift region is provided at a lower end of at least one of the trench portions sandwiching the hole-extraction mesa portion.