/Semiconductor Device
Abstract

There is provided a semiconductor device including a chip that has a main surface, a semiconductor region of a first conductivity type that is formed in a surface layer portion of the main surface, an active region that is provided in an inner portion of the main surface, an outer peripheral region that is provided in a peripheral edge portion of the main surface, a separating structure of a trench type that is formed in the main surface so as to be positioned in the semiconductor region and demarcates the active region and the outer peripheral region, and a well region of a second conductivity type that is formed in a region below the separating structure so as to be positioned in the semiconductor region and is electrically connected to the semiconductor region.

Full Text

What is claimed is:

There is provided a semiconductor device including a chip that has a main surface, a semiconductor region of a first conductivity type that is formed in a surface layer portion of the main surface, an active region that is provided in an inner portion of the main surface, an outer peripheral region that is provided in a peripheral edge portion of the main surface, a separating structure of a trench type that is formed in the main surface so as to be positioned in the semiconductor region and demarcates the active region and the outer peripheral region, and a well region of a second conductivity type that is formed in a region below the separating structure so as to be positioned in the semiconductor region and is electrically connected to the semiconductor region.
Timeline
Filed
05/21/2026
Published
09/17/2026
Granted
Not Available
IPC Codes(5)
H10D 62/10:Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
H10D 30/66:Vertical DMOS [VDMOS] FETs
H10D 62/60:Impurity distributions or concentrations