Abstract
A semiconductor device includes a substrate, a plurality of oxide definition structures, a plurality of metal gates and a first conductive via. The oxide definition structures are formed on the substrate and arranged in a first direction. The metal gates are formed on the substrate and extend in a second direction. The first conductive via is formed on the substrate, located between two of the metal gates, extends in the first direction and has a first width in the second direction. There is a distance between adjacent two of the metal gates in the second direction, and a first ratio of the first width to the distance ranges between 0.2 and 0.7.
Full Text
What is claimed is:
A semiconductor device includes a substrate, a plurality of oxide definition structures, a plurality of metal gates and a first conductive via. The oxide definition structures are formed on the substrate and arranged in a first direction. The metal gates are formed on the substrate and extend in a second direction. The first conductive via is formed on the substrate, located between two of the metal gates, extends in the first direction and has a first width in the second direction. There is a distance between adjacent two of the metal gates in the second direction, and a first ratio of the first width to the distance ranges between 0.2 and 0.7.
Timeline
Filed
05/20/2026Published
09/17/2026Granted
Not AvailableIPC Codes(4)
H10W 20/20:Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
H10D 30/43:having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
H10D 30/67:Thin-film transistors [TFT]