Embodiments described herein relate to semiconductor manufacturing and processing. In some embodiments, a method for auto centering substrates in a process chamber is provide and includes detecting a misalignment of a substrate loaded on a substrate support disposed in a chamber volume of a process chamber, determining a recommended adjustment for the substrate to correct the detected misalignment, and providing gas flow from the chamber volume to the substrate support based on the recommended adjustment. The method also includes detecting a corrected position of the substrate on the substrate support, wherein the corrected position corresponds to a center position of the substrate support and stopping the flow of gas to the substrate support to set the substrate on the substrate support in the corrected position.