A high frequency transistor includes a substrate, gates, sources/drains, a first metal layer, source/drain contacts, and first gate contacts. The gates extend along a first direction on the substrate, and the sources/drains are disposed in the substrate. The first metal layer has first portions extending along the first direction, second portions extending along a second direction, and an annular portion surrounding the gates and directly contacting both ends of each second portion. Each first portion includes discontinuous line segments over the sources/drains. Discontinuous regions extending in the second direction is between a pair of the discontinuous line segments. Each second portion is a continuous line segment over the gates, and the continuous line segment passes through the discontinuous region. The source/drain contacts are respectively connected to the first portions and the sources/drains. The first gate contacts are respectively connected to the continuous line segment and the gates.