A semiconductor device is provided. A semiconductor device includes: a first semiconductor layer having an N conductivity type; and a second semiconductor layer formed on the first semiconductor layer and including an active region, a frame region, and a termination region, wherein the active region may include a plurality of first P pillars and first N pillars formed between the plurality of first P pillars, the frame region includes a plurality of second P pillars and second N pillars formed between the plurality of second P pillars, the termination region may include a first surface termination layer having a P conductivity type and formed to extend in a first direction, a second surface termination layer having an N conductivity type and formed to extend in the first direction under the first surface termination layer, a first low-concentration termination layer having a P conductivity type and formed to extend in the first direction under the second surface termination layer, and a second low-concentration termination layer having an N conductivity type and formed in the first direction under the first low-concentration termination layer.