A semiconductor device includes a semiconductor structure extending lengthwise along a first direction, with a first source/drain feature and a second source/drain feature disposed on the semiconductor structure and spaced apart from each other. A gate structure extends lengthwise along a second direction across the semiconductor structure and is positioned between the first source/drain feature and the second source/drain feature. A source/drain contact is disposed over the first source/drain feature. A dielectric layer extends along a sidewall of the source/drain contact and protrudes over a top surface of the source/drain contact. Furthermore, a source/drain via is disposed over the source/drain contact. A bottom end of the source/drain via is positioned lower than a top end of the dielectric layer.