A bandgap voltage reference circuit is provided. In one example, a cell includes a first device including a first plurality of MOSFETs connected in series The cell further includes a second device including a second plurality of MOSFETs connected in series. The second device connects in series with the first device. The second plurality of MOSFETs has a second Vt that is higher than the first Vt. The cell further includes a reference node connected between the first stack gate device and the second stack gate device.