/Semiconductor Device
Abstract

A method of manufacturing a semiconductor device includes designing a layout of the semiconductor device based on a circuit design, and manufacturing the semiconductor device based on the designed layout, the designing of the layout including placing a first power rail and a second power rail that extend in a first direction and are spaced apart from each other, placing a power tap cell continuously in a first row, a second row adjacent to the first row, and a third row adjacent to the second row, and placing a power delivery network on the second side of the substrate, the power tap cell including a first power through via that penetrates the substrate and extends from the power delivery network to the first power rail, and a second power through via that penetrates the substrate and extends from the power delivery network to the second power rail.

Full Text

What is claimed is:

A method of manufacturing a semiconductor device includes designing a layout of the semiconductor device based on a circuit design, and manufacturing the semiconductor device based on the designed layout, the designing of the layout including placing a first power rail and a second power rail that extend in a first direction and are spaced apart from each other, placing a power tap cell continuously in a first row, a second row adjacent to the first row, and a third row adjacent to the second row, and placing a power delivery network on the second side of the substrate, the power tap cell including a first power through via that penetrates the substrate and extends from the power delivery network to the first power rail, and a second power through via that penetrates the substrate and extends from the power delivery network to the second power rail.
Timeline
Filed
06/01/2026
Published
09/24/2026
Granted
Not Available
IPC Codes(7)
H10W 20/41:characterised by their conductive parts
G06F 30/31:Design entry, e.g. editors specifically adapted for circuit design
H10D 30/43:having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels