Abstract
A semiconductor device includes a first well and a second well. The first well is configured to operate as a back gate terminal of a first transistor. The second well is separated from the first well, and is configured to operate as a back gate terminal of a second transistor. Each of a first source/drain terminal of the second transistor, and a first source/drain terminal of the first transistor and the back gate terminal of the first transistor are coupled to each other.
Full Text
What is claimed is:
A semiconductor device includes a first well and a second well. The first well is configured to operate as a back gate terminal of a first transistor. The second well is separated from the first well, and is configured to operate as a back gate terminal of a second transistor. Each of a first source/drain terminal of the second transistor, and a first source/drain terminal of the first transistor and the back gate terminal of the first transistor are coupled to each other.
Timeline
Filed
06/02/2026Published
09/24/2026Granted
Not AvailableIPC Codes(6)
H10D 64/23:Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
H10D 30/01:Manufacture or treatment
H10D 30/60:Insulated-gate field-effect transistors [IGFET] (takes precedence H10D 30/40)