/Image Sensor Including Polarization Patterns
Abstract

An image sensor includes a first through third sets of photoelectric conversion devices (PDs) arranged in a first 2 x 2 matrix form and a fourth set of PDs arranged in a first 2 x 1 matrix form, first through third color filters respectively on the first through third set of PDs configured to transmit light corresponding to respectively different wavelengths, a first plurality of patterns on the fourth set of PDs, and a grid pattern between the first color filter and the first plurality of patterns. The first, fourth, second, and the third set of PDs are sequentially arranged in a counterclockwise direction, the first plurality of patterns are directly adjacent to the first color filter, and a width of each of the first plurality of patterns in a first direction parallel to the second surface is less than a height of each of the first plurality of patterns.

Full Text

What is claimed is:

An image sensor includes a first through third sets of photoelectric conversion devices (PDs) arranged in a first 2 x 2 matrix form and a fourth set of PDs arranged in a first 2 x 1 matrix form, first through third color filters respectively on the first through third set of PDs configured to transmit light corresponding to respectively different wavelengths, a first plurality of patterns on the fourth set of PDs, and a grid pattern between the first color filter and the first plurality of patterns. The first, fourth, second, and the third set of PDs are sequentially arranged in a counterclockwise direction, the first plurality of patterns are directly adjacent to the first color filter, and a width of each of the first plurality of patterns in a first direction parallel to the second surface is less than a height of each of the first plurality of patterns.
Timeline
Filed
06/02/2026
Published
09/24/2026
Granted
Not Available
IPC Codes(2)
H10F 39/00:Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group e.g. radiation detectors comprising photodiode arrays
H10F 39/18:Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors