Abstract
A process for producing polycrystalline silicon and a gas phase deposition reactor utilizing the same. The gas phase deposition reactor includes a measuring apparatus that is operably configured to determine haze within a reactor space during deposition. Where the haze determined is a measure of an amount of particles within a reaction gas atmosphere within the reaction space of the gas phase deposition reactor. Where the measuring apparatus comprises a scattered light detector and/or extinction detector having an external source of electromagnetic radiation and the gas phase deposition reactor is a Siemens reactor or a fluidized bed reactor.
Full Text
What is claimed is:
A process for producing polycrystalline silicon and a gas phase deposition reactor utilizing the same. The gas phase deposition reactor includes a measuring apparatus that is operably configured to determine haze within a reactor space during deposition. Where the haze determined is a measure of an amount of particles within a reaction gas atmosphere within the reaction space of the gas phase deposition reactor. Where the measuring apparatus comprises a scattered light detector and/or extinction detector having an external source of electromagnetic radiation and the gas phase deposition reactor is a Siemens reactor or a fluidized bed reactor.
Timeline
Filed
06/16/2026Published
10/01/2026Granted
Not AvailableIPC Codes(3)
C01B 33/035:by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
B01J 8/42:with fluidised bed subjected to electric current or to radiations
B01J 19/00:Chemical, physical or physico-chemical processes in general; Their relevant apparatus