Abstract
A semiconductor device may include a gate structure including stacked local lines and a multi-step structure, wherein the multi-step structure defines pads of the local lines, channel patterns respectively disposed over the pads, a block word line disposed over the channel patterns and extending along a profile of the multi-step structure, and first contact plugs passing through the channel patterns and respectively connecting the channel patterns and the local lines.
Full Text
What is claimed is:
A semiconductor device may include a gate structure including stacked local lines and a multi-step structure, wherein the multi-step structure defines pads of the local lines, channel patterns respectively disposed over the pads, a block word line disposed over the channel patterns and extending along a profile of the multi-step structure, and first contact plugs passing through the channel patterns and respectively connecting the channel patterns and the local lines.
Timeline
Filed
06/16/2026Published
10/01/2026Granted
Not AvailableIPC Codes(4)
H10B 43/27:the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/27:the channels comprising vertical portions, e.g. U-shaped channels
H10B 80/00:Assemblies of multiple devices comprising at least one memory device covered by this subclass