A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first electrode layer over the substrate. The semiconductor device structure includes a capacitor dielectric layer over the first electrode layer and the substrate. The capacitor dielectric layer conformally covers a top surface and a sidewall of the first electrode layer. The semiconductor device structure includes a second electrode layer over the capacitor dielectric layer. A first portion of the second electrode layer over the sidewall of the first electrode layer has a first surface roughness greater than a second surface roughness of a second portion of the second electrode layer over the top surface of the first electrode layer and is thinner than the second portion. The semiconductor device structure includes a third electrode layer over the second electrode layer.