Abstract
A semiconductor device includes: a plurality of conductive lines extending in a first direction; and a plurality of memory cells arranged in a plurality of columns extending in a second direction intersecting the first direction, wherein the plurality of columns include odd-numbered columns and even-numbered columns, wherein a specific conductive line among the plurality of conductive lines partially overlaps a first portion of a memory cell in one of the odd-numbered columns and a second portion of a memory cell in one of the even-numbered columns, and wherein the first portion and the second portion face each other with respect to a center line of the specific conductive line.
Full Text
What is claimed is:
A semiconductor device includes: a plurality of conductive lines extending in a first direction; and a plurality of memory cells arranged in a plurality of columns extending in a second direction intersecting the first direction, wherein the plurality of columns include odd-numbered columns and even-numbered columns, wherein a specific conductive line among the plurality of conductive lines partially overlaps a first portion of a memory cell in one of the odd-numbered columns and a second portion of a memory cell in one of the even-numbered columns, and wherein the first portion and the second portion face each other with respect to a center line of the specific conductive line.
Timeline
Filed
06/11/2026Published
10/01/2026Granted
Not AvailableIPC Codes(4)
H10B 63/00:Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
H10B 61/00:Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
H10N 70/00:Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N 79/00)