A CIS has a monolithic transfer gate electrode embedded in the semiconductor substrate. In some embodiments, the transfer gate electrode is below the surface. In some embodiments, the top of the transfer gate electrode is nearly even with or below a bottom of a floating diffusion region. In some embodiments, the transfer gate electrode wraps partially around the area of the floating diffusion region. In some embodiments, the transfer gate electrode wraps entirely around the area of the floating diffusion region. Embedding the transfer gate in the substrate reduces surface crowding and allows a scale reduction. The wrapping of the transfer gate electrode around the area of the floating diffusion region increases the area of the transfer gate channel while limiting the area that is occupied by the transfer gate.