Abstract
A method for manufacturing semiconductor devices. The method includes placing a semiconductor wafer in a chamber. The method includes applying, in the chamber, a plasma that contains no fluorine. The plasma causes one or more components, in contact with the chamber, that each comprise a fluorinated coating to release its fluorine on a surface of the semiconductor wafer.
Full Text
What is claimed is:
A method for manufacturing semiconductor devices. The method includes placing a semiconductor wafer in a chamber. The method includes applying, in the chamber, a plasma that contains no fluorine. The plasma causes one or more components, in contact with the chamber, that each comprise a fluorinated coating to release its fluorine on a surface of the semiconductor wafer.
Timeline
Filed
06/15/2026Published
10/01/2026Granted
Not AvailableIPC Codes(3)
H10P 14/60:of insulating materials
H10P 10/00:Bonding of wafers, substrates or parts of devices
H10P 72/00:Handling or holding of wafers, substrates or devices during manufacture or treatment thereof