/Layer Structures Including Configuration Increasing Operation Characteristics, Methods Of Manufacturing The Same, Electronic Devices Including Layer Structures, And Electronic Apparatuses Including Electronic Devices
Abstract
An electronic device may include a first electrode, a second electrode and separated from the first electrode, a channel layer including transition metal dichalcogenide (TMD) and connected to the first electrode and the second electrode, a gate electrode, and a strain-inducing layer on the channel layer. The gate electrode may be separated from the channel layer, the first electrode and the second electrode. The channel layer, the gate electrode, and the strain-inducing layer may vertically overlap each other. The strain-inducing layer may have a coefficient of thermal expansion different from that of the channel layer.
Full Text
What is claimed is:
An electronic device may include a first electrode, a second electrode and separated from the first electrode, a channel layer including transition metal dichalcogenide (TMD) and connected to the first electrode and the second electrode, a gate electrode, and a strain-inducing layer on the channel layer. The gate electrode may be separated from the channel layer, the first electrode and the second electrode. The channel layer, the gate electrode, and the strain-inducing layer may vertically overlap each other. The strain-inducing layer may have a coefficient of thermal expansion different from that of the channel layer.
Timeline
Filed
06/11/2026Published
10/01/2026Granted
Not AvailableIPC Codes(7)
H10D 30/69:IGFETs having charge trapping gate insulators, e.g. MNOS transistors
H10D 30/01:Manufacture or treatment
H10D 30/67:Thin-film transistors [TFT]