/Rfsoi Semiconductor Structures Including An Electromagnetic Shield Layer And Methods Of Manufacturing The Same
Abstract
A semiconductor may include a handle substrate, a semiconductor material layer on which semiconductor devices, metal interconnect structures, dielectric material layers, and an inductor structure are located, and a patterned magnetic shielding layer including at least one portion of a ferromagnetic material having relative permeability of at least 20 and disposed between the semiconductor material layer and the handle substrate and reducing electromagnetic coupling between the inductor structure and the handle substrate.
Full Text
What is claimed is:
A semiconductor may include a handle substrate, a semiconductor material layer on which semiconductor devices, metal interconnect structures, dielectric material layers, and an inductor structure are located, and a patterned magnetic shielding layer including at least one portion of a ferromagnetic material having relative permeability of at least 20 and disposed between the semiconductor material layer and the handle substrate and reducing electromagnetic coupling between the inductor structure and the handle substrate.
Timeline
Filed
06/12/2026Published
10/01/2026Granted
Not AvailableIPC Codes(4)
H10W 42/20:protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
H10W 20/20:Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
H10W 20/40:Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes