A method of determining sample information associated with a sample is provided. In an embodiment, when a sample has a first temperature, a first measure of electrons of the sample is determined. When the sample has a second temperature different than the first temperature, a second measure of electrons of the sample is determined. Sample information associated with the sample is determined based upon the first measure of electrons and the second measure of electrons. The sample information includes a dopant concentration of the sample, a measure of electric field strength of the sample, a defect concentration of the sample, a Fermi level of the sample and/or an indication of a space charge region of the sample.