Disclosed herein are microelectronic assemblies including microelectronic components that are coupled together by direct bonding, as well as related structures and techniques. For example, in some embodiments, a microelectronic assembly may include a first microelectronic component; a second microelectronic component coupled to the first microelectronic component by a first direct bonding region, the first direct bonding region comprising first metal contacts and a first inorganic dielectric material between adjacent ones of the first metal contacts; and a third microelectronic component coupled to the second microelectronic component by a second direct bonding region, the second direct bonding region comprising second metal contacts and a second inorganic dielectric material between adjacent ones of the second metal contacts, wherein the second microelectronic component is between the first microelectronic component and the third microelectronic component.