A semiconductor device includes a substrate, a metal-insulator-metal (MIM) structure in the substrate, an interconnect structure over the MIM structure and the substrate, a first contact pad over the top surface of the interconnect structure, and a second contact pad over the top surface of the interconnect structure. The MIM structure includes first electrodes of a first polarity and second electrodes of a second polarity. The interconnect structure includes conductive paths electrically coupling the first electrodes and the second electrodes to a top surface of the interconnect structure. The conductive paths are electrically isolated from each other within the interconnect structure. The first contact pad electrically connects together the conductive paths electrically coupled to the first electrodes. The second contact pad electrically connects together the conductive paths electrically coupled to the second electrodes.