Abstract
In an embodiment a method includes switching off a transistor device by interrupting a first conducting channel by driving a first gate electrode, and after interrupting the first conducting channel, interrupting a second conducting channel by driving a second gate electrode, wherein the second gate electrode is arranged adjacent the first gate electrode in a current flow direction of the transistor device.
Full Text
What is claimed is:
In an embodiment a method includes switching off a transistor device by interrupting a first conducting channel by driving a first gate electrode, and after interrupting the first conducting channel, interrupting a second conducting channel by driving a second gate electrode, wherein the second gate electrode is arranged adjacent the first gate electrode in a current flow direction of the transistor device.
Timeline
Filed
06/15/2026Published
10/01/2026Granted
Not AvailableIPC Codes(13)
H03K 17/567:Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
H03K 17/687:the devices being field-effect transistors
H10D 12/00:Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]