Abstract
A semiconductor device includes a first bit line, a memory layer conformally lining the first bit line, a selector layer lining the memory layer, and a word metal layer covering the selector layer. The first bit line includes a first conductive layer and a second conductive layer, and the first conductive layer and the second conductive layer include different electric resistances and different widths.
Full Text
What is claimed is:
A semiconductor device includes a first bit line, a memory layer conformally lining the first bit line, a selector layer lining the memory layer, and a word metal layer covering the selector layer. The first bit line includes a first conductive layer and a second conductive layer, and the first conductive layer and the second conductive layer include different electric resistances and different widths.
Timeline
Filed
06/11/2026Published
10/01/2026Granted
Not AvailableIPC Codes(2)
H10N 70/00:Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching (integrated devices or assemblies of multiple devices H10N 79/00)
H10B 63/00:Resistance change memory devices, e.g. resistive RAM [ReRAM] devices