Abstract
A semiconductor structure includes semiconductor structure includes a metal gate structure, a plurality of dielectric pillars disposed in the metal gate structure, a source/drain structure disposed at tow side of the metal gate structure, and at least a first connecting structure disposed over one of the dielectric pillars and coupled to the metal gate structure. The first connecting structure overlaps the one of the dielectric pillars entirely from a top view. An area of the first connecting structure is greater than an area of the one of the dielectric pillars from the top view.
Full Text
What is claimed is:
A semiconductor structure includes semiconductor structure includes a metal gate structure, a plurality of dielectric pillars disposed in the metal gate structure, a source/drain structure disposed at tow side of the metal gate structure, and at least a first connecting structure disposed over one of the dielectric pillars and coupled to the metal gate structure. The first connecting structure overlaps the one of the dielectric pillars entirely from a top view. An area of the first connecting structure is greater than an area of the one of the dielectric pillars from the top view.
Timeline
Filed
06/17/2026Published
10/01/2026Granted
Not AvailableIPC Codes(4)
H10D 64/27:Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
H10D 30/60:Insulated-gate field-effect transistors [IGFET] (takes precedence H10D 30/40)
H10D 64/01:Manufacture or treatment